Abstract
In situ investigations of cracks propagating at up to 2.5 km s−1 along an (001) plane of a silicon single crystal are reported, using X-ray diffraction megahertz imaging with intense and time-structured synchrotron radiation. The studied system is based on the Smart Cut process, where a buried layer in a material (typically Si) is weakened by microcracks and then used to drive a macroscopic crack (10−1 m) in a plane parallel to the surface with minimal deviation (10−9 m). A direct confirmation that the shape of the crack front is not affected by the distribution of the microcracks is provided. Instantaneous crack velocities over the centimetre-wide field of view were measured and showed an effect of local heating by the X-ray beam. The post-crack movements of the separated wafer parts could also be observed and explained using pneumatics and elasticity. A comprehensive view of controlled fracture propagation in a crystalline material is provided, paving the way for the in situ measurement of ultra-fast strain field propagation.
Funder
Agence Nationale de la Recherche
Publisher
International Union of Crystallography (IUCr)
Subject
General Biochemistry, Genetics and Molecular Biology
Reference39 articles.
1. Efficient production of silicon-on-insulator films by co-implantation of He+ with H+
2. Basic mechanisms involved in the Smart-Cut® process
3. Crystalline damage in silicon wafers and 'rare event' failure introduced by low-energy mechanical impact
4. Silicon on insulator material technology
5. Claverie, A., Daix, N., Okba, F. & Cherkashin, N. (2018). 22nd International Conference on Ion Implantation Technology (IIT), 16-21 September 2018, Würzburg, Germany, pp. 128-131. New York: IEEE.
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