Metrology of Silicon Wafers Through Synchrotron Section Topography and X-Ray Diffraction Imaging-Reference-Cited by-同舟云学术

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Metrology of Silicon Wafers Through Synchrotron Section Topography and X-Ray Diffraction Imaging

Published:2024-07 Issue:7 Volume:14 Page:1164-1171
ISSN:2156-3950
Container-title:IEEE Transactions on Components, Packaging and Manufacturing Technology
language:
Short-container-title:IEEE Trans. Compon., Packag. Manufact. Technol.

Author:

Xin Xiao¹,Gorji Nima E.²^ORCID,Tseng Ming-Lang³

Affiliation:

1. College of Foreign Studies, Shandong Technology and Business University, Yantai, China

2. Mechatronic Engineering, Technological University Dublin, Dublin 15, Ireland

3. Institute of Innovation and Circular Economy, Asia University, Taichung City, Taiwan

Funder

Irish Research Council

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/5503870/10638331/10496315.pdf?arnumber=10496315

Reference29 articles.

1. Investigation of a fitting phase-shift method for stress analysis using infrared photoelasticity

2. Micro-crack defects detection of semiconductor Si-wafers based on Barker code laser infrared thermography

3. Improvements in Decision Making Criteria for Thermal Warpage

4. Scaling-friendly approaches to minimize the magnitude and asymmetry of wafer warpage during 3-D NAND fabrication

5. Reproducible strain measurement in electronic devices by applying integer multiple to scanning grating in scanning moiré fringe imaging

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