Modulation of post-fracture roughness with induced shear stress in the smart cut process-Reference-Cited by-同舟云学术

Modulation of post-fracture roughness with induced shear stress in the smart cut process

Published:2024-07-22 Issue:4 Volume:136 Page:
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:

Author:

Colonel Lucas¹^ORCID,Lomonaco Q.¹^ORCID,Abadie K.¹^ORCID,Michaud L. G.²^ORCID,Morales C.¹,Moreau S.¹^ORCID,Mazen F.¹^ORCID,Fournel F.¹^ORCID,Landru D.³^ORCID,Rieutord F.³^ORCID

Affiliation:

1. Université Grenoble Alpes, CEA, LETI 1 , F-38000 Grenoble, France

2. EV Group 2 , DI E. Thallner Straße 1, 4782 St. Florian/Inn, Austria

3. SOITEC, Parc Technologique des Fontaines 3 , 38190 Bernin, France

Abstract

Surface pattern formation of Smart Cut™ silicon-on-insulator (SOI) substrates is investigated using a new process derived from this technology. The local control of SOI surface roughness is achieved by using hetero-temperature surface activated bonding to introduce locally bespoke shear stresses into bonded silicon wafers. The finite element method is used to back up experimental measurements of these large deformations to determine the amount of shear stresses introduced into the structure, and to determine its impact on the fracture mechanism.

Publisher

AIP Publishing

Link

https://pubs.aip.org/aip/jap/article-pdf/doi/10.1063/5.0223114/20068881/045106_1_5.0223114.pdf

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