Effects of nitrogen on the interface density of states distribution in 4H-SiC metal oxide semiconductor field effect transistors: Super-hyperfine interactions and near interface silicon vacancy energy levels-Reference-Cited by-同舟云学术

Effects of nitrogen on the interface density of states distribution in 4H-SiC metal oxide semiconductor field effect transistors: Super-hyperfine interactions and near interface silicon vacancy energy levels

Published:2018-11-14 Issue:18 Volume:124 Page:184501
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Anders Mark A.¹,Lenahan Patrick M.²,Edwards Arthur H.³,Schultz Peter A.⁴,Van Ginhoven Renee M.⁵

Affiliation:

1. National Institute of Standards and Technology (NIST), 100 Bureau Drive, Gaithersburg, Maryland 20899, USA

2. Department of Engineering Science and Mechanics, Pennsylvania State University, 212 EES Bldg., University Park, Pennsylvania 16802, USA

3. Space Vehicles Directorate, Air Force Research Laboratory, Kirtland Air Force Base, New Mexico 87117-5776, USA

4. Sandia National Laboratories, Albuquerque, New Mexico 87185-1322, USA

5. Directed Energy Directorate, Air Force Research Laboratory, Kirtland Air Force Base, New Mexico 87117-5776, USA

Funder

Air Force Office of Scientific Research

Army Research Laboratory

Sandia National Laboratories

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5045668

Reference36 articles.

1. Fixed nitrogen atoms in the SiO2/SiC interface region and their direct relationship to interface trap density

2. Density of interface states, electron traps, and hole traps as a function of the nitrogen density in SiO2 on SiC

3. Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide

4. Effect of nitric oxide annealing on the interface trap densities near the band edges in the 4H polytype of silicon carbide

5. The Effect of Nitridation on SiC MOS Oxides as Evaluated by Charge Pumping

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Advances and challenges in 4H silicon carbide: defects and impurities;Physica Scripta;2024-08-01

2. Investigation and passivation of boron and hydrogen impurities in tetragonal ZrO2 dielectrics for dynamic random access memory capacitors;Journal of Applied Physics;2023-03-22

3. Electronic structure of intrinsic defects in c -gallium nitride: Density functional theory study without the jellium approximation;Physical Review B;2022-06-10

4. Computational study of first-row transition metals in monodoped 4H-SiC;Modelling and Simulation in Materials Science and Engineering;2021-05-20

5. Theoretical study of intrinsic defects in cubic silicon carbide 3C -SiC;Physical Review B;2021-05-17