Fixed nitrogen atoms in the SiO2/SiC interface region and their direct relationship to interface trap density
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3659689
Reference15 articles.
1. Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide
2. Critical Technical Issues in High Voltage SiC Power Devices
3. Bias Stress-Induced Threshold-Voltage Instability of SiC MOSFETs
4. High Temperature Rapid Thermal Oxidation and Nitridation of 4H-SiC in Diluted N2O and NO Ambient
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