Investigation and passivation of boron and hydrogen impurities in tetragonal ZrO2 dielectrics for dynamic random access memory capacitors

Author:

Li Guangzhuo12ORCID,Liu Zhu-You12ORCID,Zhang Cai-Xin1ORCID,Cai Xuefen1ORCID,Yan Lei3,Zhang Chen12,Deng Hui-Xiong12ORCID

Affiliation:

1. State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences 1 , Beijing 100083, China

2. Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences 2 , Beijing 100049, China

3. 3Science and Technology on Low-Light-Level Night Vision Laboratory, Xi'an 710065, China

Abstract

Tetragonal ZrO2 high-k material as the dielectric layer of dynamic random access memory (DRAM) capacitors faces bulk defect related leakage current, which is one of the main obstacles to the down-scaling of DRAM devices. Boron and hydrogen impurities are known to be responsible for leakage current degradation and are hard to be removed in DRAM capacitors. However, the defect origins of boron and hydrogen leakage current are still puzzling, and corresponding suppression methods are urged. In this work, the properties of boron and hydrogen impurities in tetragonal ZrO2 are investigated using first-principles calculations, and defect types such as boron and hydrogen interstitials are discovered to have detrimental defect levels related to leakage current. Based on the discovery, a chlorine co-doping approach that can passivate detrimental defects by forming defect complexes is further proposed. By introducing level repulsion due to coupling between defect states, defect levels of passivated defect complexes are moved out of the region of leakage current contribution. Thus, bulk defect related leakage current in tetragonal ZrO2 based DRAM capacitors can be effectively suppressed without device structure modification, and a broad vista is opened for next-generation DRAM devices.

Funder

National Natural Science Foundation of China

Youth Innovation Promotion Association

Publisher

AIP Publishing

Subject

General Physics and Astronomy

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