Low temperature (100 °C) atomic layer deposited-ZrO2 for recessed gate GaN HEMTs on Si-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Low temperature (100 °C) atomic layer deposited-ZrO2 for recessed gate GaN HEMTs on Si

Published:2017-08-21 Issue:8 Volume:111 Page:082905
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Byun Young-Chul¹^ORCID,Lee Jae-Gil¹²,Meng Xin³,Lee Joy S.¹^ORCID,Lucero Antonio T.¹,Kim Si Joon¹,Young Chadwin D.¹^ORCID,Kim Moon J.¹,Kim Jiyoung¹³

Affiliation:

1. Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, Texas 75080, USA

2. Department of Electrical and Computer Engineering, Seoul National University, Seoul 151-747, South Korea

3. Department of Electrical Engineering, The University of Texas at Dallas, Richardson, Texas 75080, USA

Funder

Korea Evaluation Institute of Industrial Technology (KEIT)

Sungkyunkwan University (SKKU)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4998729

Reference50 articles.

1. AlGaN/GaN HEMTs-an overview of device operation and applications

2. Threshold Voltage Instability in Al$_{2}$O$_{3}$/GaN/AlGaN/GaN Metal–Insulator–Semiconductor High-Electron Mobility Transistors

3. Towards understanding the origin of threshold voltage instability of AlGaN/GaN MIS-HEMTs

4. Capacitance–Voltage Characteristics of Al2O3/AlGaN/GaN Structures and State Density Distribution at Al2O3/AlGaN Interface

5. 18-GHz 3.65-W/mm Enhancement-Mode AlGaN/GaN HFET Using Fluorine Plasma Ion Implantation

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Small V _th Shift and Low Dynamic R _on in GaN MOSHEMT With ZrO₂ Gate Dielectric;IEEE Transactions on Electron Devices;2023-11

2. Investigation and passivation of boron and hydrogen impurities in tetragonal ZrO2 dielectrics for dynamic random access memory capacitors;Journal of Applied Physics;2023-03-22

3. Remarkable Reduction in IG with an Explicit Investigation of the Leakage Conduction Mechanisms in a Dual Surface-Modified Al2O3/SiO2 Stack Layer AlGaN/GaN MOS-HEMT;Materials;2022-12-19

4. Improved Electrical Characteristics of AlGaN/GaN High-Electron-Mobility Transistor with Al2O3/ZrO2 Stacked Gate Dielectrics;Materials;2022-10-05

5. High‐Temperature Stability Amorphous Ternary AlBN Dielectric Films on N ⁺⁺ GaN;Advanced Engineering Materials;2022-05-02

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3