High‐Temperature Stability Amorphous Ternary AlBN Dielectric Films on N <sup>++</sup> GaN-Reference-Cited by-同舟云学术

High‐Temperature Stability Amorphous Ternary AlBN Dielectric Films on N ⁺⁺ GaN

Published:2022-05-02 Issue:10 Volume:24 Page:2200191
ISSN:1438-1656
Container-title:Advanced Engineering Materials
language:en
Short-container-title:Adv Eng Mater

Author:

Liu Fengfeng¹²,Li Yuxiong¹²,Devaux Xavier³,Lu Yuan³,Luo Yi⁴,Sui Zhanpeng²,Cai Yong¹²,Jiang Chunping¹²^ORCID

Affiliation:

1. School of Nano-Tech and Nano-Bionics University of Science and Technology of China Hefei 230026 China

2. Key Lab of Nanodevices and Applications Suzhou Institute of Nano-Tech and Nano-Bionics Chinese Academy of Sciences Suzhou 215123 China

3. Institut Jean Lamour UMR 7198 CNRS-Université de Lorraine Campus ARTEM, 2 allée André Guinier 54011 Nancy Cedex France

4. Micro/Nano Fabrication Laboratory Microsystem & Terahertz Research Center Chengdu 610200 China

Funder

National Natural Science Foundation of China

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adem.202200191

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4. M.Cwiklinski P.Bruckner S.Leone S.Krause C.Friesicke H.Massler R.Quay O.Ambacher in2020 IEEE/MTT-S Inter. Microwave Symp. (IMS) IEEE Los Angeles CA 2020 pp.1117–1120.

5. Recent Advances in GaN‐Based Power HEMT Devices

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