Theoretical study of intrinsic defects in cubic silicon carbide 3C -SiC
Author:
Funder
U.S. Department of Energy
Laboratory Directed Research and Development
Air Force Office of Scientific Research
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.103.195202/fulltext
Reference60 articles.
1. Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: A review
2. Cubic silicon carbide as a potential photovoltaic material
3. Formation energies, abundances, and the electronic structure of native defects in cubic SiC
4. Antisites in silicon carbide
5. Vacancies in SiC: Influence of Jahn-Teller distortions, spin effects, and crystal structure
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