Formation energies, abundances, and the electronic structure of native defects in cubic SiC
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.38.12752/fulltext
Reference16 articles.
1. Theoretical and Empirical Studies of Impurity Incorporation into β ‐ SiC Thin Films during Epitaxial Growth
2. Temperature dependence of electrical properties ofn‐ andp‐type 3C‐SiC
3. Electronic Structure, Total Energies, and Abundances of the Elementary Point Defects in GaAs
4. Barrier to Migration of the Silicon Self-Interstitial
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