Electronic Structure, Total Energies, and Abundances of the Elementary Point Defects in GaAs
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.55.1327/fulltext
Reference12 articles.
1. Calculation of the total energy of charged point defects using the Green's-function technique
2. Barrier to Migration of the Silicon Self-Interstitial
3. Microscopic Theory of Atomic Diffusion Mechanisms in Silicon
4. Identification of Chalcogen Point-Defect Sites in Silicon by Total-Energy Calculations
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