Temperature dependence of electrical properties ofn‐ andp‐type 3C‐SiC
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.338211
Reference10 articles.
1. Production of large‐area single‐crystal wafers of cubic SiC for semiconductor devices
2. High‐temperature electrical properties of 3C‐SiC epitaxial layers grown by chemical vapor deposition
3. Electron cyclotron resonance in cubic SiC
4. Temperature coefficient of the energy gap of β-silicon carbide
5. Static Dielectric Constant of SiC
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