Formation of Al-incorporated SiC thin films by chemical vapor deposition of vinylsilane mixed with trimethylaluminum

Abstract

Abstract We demonstrated the synthesis of Al-incorporated amorphous SiC thin films with a vinylsilane precursor, which were grown at a growth temperature of 800 °C using a hot-wall CVD system with a simultaneous supply of vinylsilane and trimethylaluminum (TMA). The SiC films were characterized by scanning electron microscopy, X-ray photoelectron spectroscopy, Fourier-transform IR spectroscopy, and X-ray diffraction. The introduction of TMA was controlled by a needle valve, and the Al composition ratio increased with the amount of TMA introduced. The Si–C bond in the thin films was dominant up to 0.25 mm aperture length of the needle valve (ALNV), and the amorphous structure was maintained up to an Al composition ratio of approximately 20%. The Al–C bond became dominant for samples with a 0.50 mm ALNV, and the crystalline Al4C3 phase was observed. Al-incorporated amorphous SiC films could also be obtained if no excess TMA was introduced into vinylsilane.