Assessing the potential of perfect screw dislocations in SiC for solid-state quantum technologies

Abstract

Although point defects in solids can be used as qubits, it remains challenging to position them in a deterministic array. By means of advanced calculations we show that perfect screw dislocations in 3C-SiC could be used to overcome this limitation. In addition, we show that such dislocations can change the spin configuration of a point defect located inside its core, without changing the localized nature of its defect states. Our findings represent a technological leap as they show that dislocations can be used as active building blocks in future defect-based quantum computers. Published by the American Physical Society 2024