Current conduction and stability of CeO2/La2O3 stacked gate dielectric
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4768943
Reference9 articles.
1. Structure and stability of La2O3/SiO2 layers on Si(001)
2. Moisture-absorption-induced permittivity deterioration and surface roughness enhancement of lanthanum oxide films on silicon
3. Selection of rare earth silicates for highly scaled gate dielectrics
4. Subthreshold Characteristics of MOS Transistors With $ \hbox{CeO}_{2}/\hbox{La}_{2}\hbox{O}_{3}$ Stacked Gate Dielectric
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1. Effects of Rapid Thermal Annealing and Different Oxidants on the Properties of LaxAlyO Nanolaminate Films Deposited by Atomic Layer Deposition;Nanoscale Research Letters;2017-03-23
2. On the scaling of subnanometer EOT gate dielectrics for ultimate nano CMOS technology;Microelectronic Engineering;2015-04
3. Post deposition annealing of epitaxial Ce1−xPrxO2−δ films grown on Si(111);Physical Chemistry Chemical Physics;2015
4. X-ray photoelectron spectroscopy study of high-k CeO2/La2O3 stacked dielectrics;AIP Advances;2014-11
5. Oxygen Vacancy Induced Room Temperature Ferromagnetism in Pr-Doped CeO2 Thin Films on Silicon;ACS Applied Materials & Interfaces;2014-10-07
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