X-ray photoelectron spectroscopy study of high-k CeO2/La2O3 stacked dielectrics
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://scitation.aip.org/deliver/fulltext/aip/journal/adva/4/11/1.4902017.pdf?itemId=/content/aip/journal/adva/4/11/10.1063/1.4902017&mimeType=pdf&containerItemId=content/aip/journal/adva
Reference19 articles.
1. H. Wong, Nano-CMOS Gate Dielectric Engineering (CRC Press, Boca Raton, 2012), p. 113.
2. Introduction of New Materials into CMOS Devices
3. On the scaling issues and high-κ replacement of ultrathin gate dielectrics for nanoscale MOS transistors
4. Advantage of further scaling in gate dielectrics below 0.5nm of equivalent oxide thickness with La2O3 gate dielectrics
5. Improving the electrical characteristics of MOS transistors with CeO2/La2O3 stacked gate dielectric
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