Selection of rare earth silicates for highly scaled gate dielectrics-Reference-Cited by-同舟云学术

Selection of rare earth silicates for highly scaled gate dielectrics

Published:2010-10 Issue:10 Volume:87 Page:1868-1871
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Kakushima K.,Okamoto K.,Koyanagi T.,Kouda M.,Tachi K.,Kawanago T.,Song J.,Ahmet P.,Tsutsui K.,Sugii N.,Hattori T.,Iwai H.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference14 articles.

1. CMOS technology-year 2010 and beyond

2. 0.6nm-EOT high-k gate stacks with HfSiOx interfacial layer grown by solid-phase reaction between HfO2 and Si substrate

3. K. Kakushima, K. Tachi, M. Adachi, K. Okamoto, S. Sato, J. Song, T. Kawanago, P. Ahmet, K. Tsutsui, N. Sugii, T. Hattori, H. Iwai, Advantage of La2O3 gate dielectric over HfO2 for direct contact and mobility improvement, in: Proceedings of 38th European Solid-state Device Research Conference (2008) 126–129.

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Recent Advances in Cerium Oxide-Based Memristors for Neuromorphic Computing;Nanomaterials;2023-08-28

2. Cerium oxide capping on Y-doped HfO2 films for ferroelectric phase stabilization with endurance improvement;Japanese Journal of Applied Physics;2022-02-01

3. Leakage current and structural analysis of annealed HfO2/La2O3 and CeO2/La2O3 dielectric stacks: A nanoscopic study;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2014-05

4. MOSFETs;Guide to State-of-the-Art Electron Devices;2013-02-25

5. Current conduction and stability of CeO2/La2O3 stacked gate dielectric;Applied Physics Letters;2012-12-03