Post deposition annealing of epitaxial Ce1−xPrxO2−δ films grown on Si(111)-Reference-Cited by-同舟云学术

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Post deposition annealing of epitaxial Ce1−xPrxO2−δ films grown on Si(111)

Published:2015 Issue:15 Volume:17 Page:9991-9996
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Wilkens H.¹²³⁴,Spieß W.¹²³⁴,Zoellner M. H.⁵⁶⁴,Niu G.⁵⁶⁴,Schroeder T.⁵⁶⁴⁷⁸,Wollschläger J.¹²³⁴

Affiliation:

1. Fachbereich Physik

2. Universität Osnabrück

3. D-49069 Osnabrück

4. Germany

5. IHP

6. D-15236 Frankfurt(Oder)

7. BTU Cottbus

8. Institute of Physics

Abstract

In this work the structural and morphological changes of Ce_1−xPr_xO_2−δ (x = 0.20, 0.35 and 0.75) films grown on Si(111) due to post deposition annealing are investigated by low energy electron diffraction combined with a spot profile analysis.

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2015/CP/C5CP01105A

Reference34 articles.

1. The fabrication of metal–oxide–semiconductor transistors using cerium dioxide as a gate oxide material

2. Current conduction and stability of CeO2/La2O3 stacked gate dielectric

3. Nonlinear conductance quantization effects in CeOx/SiO2-based resistive switching devices

4. Catalytic Properties of Ceria and CeO2-Containing Materials

5. A. F. Diwell , R. R.Rajaram, H. A.Shaw and T. J.Treux, The role of ceria in three-way catalysts in Catalysis Automotive Pollution Control, Elsevier, 1991, vol. 71

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