Nonlinear conductance quantization effects in CeOx/SiO2-based resistive switching devices
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4733356
Reference16 articles.
1. Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges
2. Resistance switching memories are memristors
3. Post soft breakdown conduction in SiO/sub 2/ gate oxides
4. Model for the Resistive Switching Effect in $ \hbox{HfO}_{2}$ MIM Structures Based on the Transmission Properties of Narrow Constrictions
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