Oxygen Vacancy Induced Room Temperature Ferromagnetism in Pr-Doped CeO2 Thin Films on Silicon-Reference-Cited by-同舟云学术

Oxygen Vacancy Induced Room Temperature Ferromagnetism in Pr-Doped CeO2 Thin Films on Silicon

Published:2014-10-07 Issue:20 Volume:6 Page:17496-17505
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Niu Gang¹,Hildebrandt Erwin²,Schubert Markus Andreas¹,Boscherini Federico³,Zoellner Marvin Hartwig¹,Alff Lambert²,Walczyk Damian¹,Zaumseil Peter¹,Costina Ioan¹,Wilkens Henrik⁴,Schroeder Thomas¹⁵

Affiliation:

1. IHP, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany

2. Institute of Materials Science, Technische Universität Darmstadt, 64287 Darmstadt, Germany

3. Department of Physics and Astronomy and CNISM, University of Bologna, Viale C. Berti Pichat 6/2, 40127 Bologna, Italy

4. Fachbereich Physik, Universität Osnabrück, Barbarastraße 7, D-49069 Osnabrück, Germany

5. BTU Cottbus-Senftenberg, Konrad-Zuse-Straße 1, 03046 Cottbus, Germany

Funder

Alexander von Humboldt-Stiftung

Deutsche Forschungsgemeinschaft

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/am502238w

Reference80 articles.

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2. Crystalline Oxides on Silicon

3. A ferroelectric memristor

4. Epitaxy of BaTiO3 thin film on Si(001) using a SrTiO3 buffer layer for non-volatile memory application

5. Giant Piezoelectricity on Si for Hyperactive MEMS

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