Systematic study of the effect of La2O3 incorporation on the flatband voltage and Si band bending in the TiN/HfO2/SiO2/p-Si stack
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3516483
Reference18 articles.
1. The High-k Solution
2. Maximizing performance for higher K gate dielectrics
3. Origin of electric dipoles formed at high-k/SiO2 interface
4. Experimental evidence for the flatband voltage shift of high-k metal-oxide-semiconductor devices due to the dipole formation at the high-k∕SiO2 interface
5. Examination of flatband and threshold voltage tuning of HfO2∕TiN field effect transistors by dielectric cap layers
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1. Impact of Lanthanum-Induced Dipoles on the Tunneling and Dielectric Properties of Gate-Stack;IEEE Transactions on Electron Devices;2023-04
2. On the Dependence of Band Alignment of SiO₂/Si Stack on SiO₂ Thickness: Extrinsic Or Intrinsic?;IEEE Access;2020
3. Direct evidence of flat band voltage shift for TiN/LaO or ZrO/SiO2 stack structure via work function depth profiling;Scientific Reports;2017-03-02
4. New dispersion model for band gap tracking;Thin Solid Films;2015-11
5. Study of the La-related dipole in TiN/LaOx/HfSiON/SiON/Si gate stacks using hard X-ray photoelectron spectroscopy and backside medium energy ion scattering;Applied Surface Science;2015-04
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