Impact of Lanthanum-Induced Dipoles on the Tunneling and Dielectric Properties of Gate-Stack
Author:
Affiliation:
1. State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, China
2. Hongzhiwei Technology (Shanghai) Company Ltd., Shanghai, China
Funder
Shanghai Sailing Program
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/10081247/10054479.pdf?arnumber=10054479
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3. Quantum Transport Modeling From First Principles
4. Valence‐band discontinuities of wurtzite GaN, AlN, and InN heterojunctions measured by x‐ray photoemission spectroscopy
5. Valence‐band discontinuity between GaN and AlN measured by x‐ray photoemission spectroscopy
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