Critical issues for the growth of high-quality (Al,Ga)N/GaN and GaN/(In,Ga)N heterostructures on SiC(0001) by molecular-beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.125524
Reference12 articles.
1. High mobility two-dimensional electron gas in AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy
2. Giant electric fields in unstrained GaN single quantum wells
3. Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures
4. Piezoelectric effects on the optical properties of GaN/AlxGa1−xN multiple quantum wells
5. GaInN/GaN multiple-quantum-well light-emitting diodes grown by molecular beam epitaxy
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