Comprehensive Analysis of Metal Modulated Epitaxial GaN
Author:
Affiliation:
1. School of Electrical and Computer Engineering, Georgia Institute of Technology, 777 Atlantic Dr NW, Atlanta, Georgia 30332-0250, United States
Funder
Office of Naval Research
Publisher
American Chemical Society (ACS)
Subject
General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/acsami.0c09114
Reference75 articles.
1. III-Nitride Double-Heterojunction Solar Cells With High In-Content InGaN Absorbing Layers: Comparison of Large-Area and Small-Area Devices
2. Enhanced performance of InGaN solar cell by using a super-thin AlN interlayer
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5. High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures
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