InGaN-based thin film solar cells: Epitaxy, structural design, and photovoltaic properties-Reference-Cited by-同舟云学术

InGaN-based thin film solar cells: Epitaxy, structural design, and photovoltaic properties

Published:2015-03-14 Issue:10 Volume:117 Page:105706
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Sang Liwen¹²,Liao Meiyong³,Koide Yasuo³,Sumiya Masatomo³⁴

Affiliation:

1. International Center for Material Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan

2. JST-PRESTO, The Japan Science and Technology Agency, Tokyo 102-0076, Japan

3. Wide Bandgap Materials Group, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan

4. JST-ALCA, The Japan Science and Technology Agency, Tokyo 102-0076, Japan

Funder

World Premier International Research Center initiative on Materials Nanoarchitectonics

Japan Society for the Promotion of Science (JSPS)

Japan Science and Technology Agency (JST)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4914908

Reference22 articles.

1. Unusual properties of the fundamental band gap of InN

2. Third generation photovoltaics

3. When group-III nitrides go infrared: New properties and perspectives

4. Superior radiation resistance of In1−xGaxN alloys: Full-solar-spectrum photovoltaic material system

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