MBE of III-Nitride Semiconductors for Electronic Devices
Author:
Affiliation:
1. Fraunhofer Institute for Applied Solid State Physics; 79108 Freiburg im Breisgau Germany
Publisher
John Wiley & Sons Ltd
Link
http://onlinelibrary.wiley.com/wol1/doi/10.1002/9781119354987.ch7/fullpdf
Reference87 articles.
1. GaN-Based RF Power Devices and Amplifiers
2. Plasma-assisted MBE of InGaN epilayers with atomically smooth and nanocolumnar morphology, grown on MOVPE GaN/Al2O3 templates
3. High-Quality InGaN Films Grown on Ga-Polarity GaN by Plasma-Assisted Molecular-Beam Epitaxy
4. Lattice-matched InAlN/GaN two-dimensional electron gas with high mobility and sheet carrier density by plasma-assisted molecular beam epitaxy
5. A study of Al1−xInxN growth by reflection high-energy electron diffraction—incorporation of cation atoms during molecular-beam epitaxy
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