Lattice-matched InAlN/GaN two-dimensional electron gas with high mobility and sheet carrier density by plasma-assisted molecular beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference12 articles.
1. Power electronics on InAlN/(In)GaN: Prospect for a record performance
2. Characteristics of In<tex>$_x$</tex>Al<tex>$_1-x$</tex>N–GaN High-Electron Mobility Field-Effect Transistor
3. Molecular beam epitaxy of InAlN∕GaN heterostructures for high electron mobility transistors
4. High-sheet-charge–carrier-density AlInN∕GaN field-effect transistors on Si(111)
5. InAlN/GaN Heterostructure Field-Effect Transistors Grown by Plasma-Assisted Molecular-Beam Epitaxy
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1. Facile integration of an Al-rich Al1–x In x N photodetector on free-standing GaN by radio-frequency magnetron sputtering;Chinese Physics B;2023-11-01
2. Strain relaxation and self-heating effects of fin AlGaN/GaN HEMTs;Semiconductor Science and Technology;2023-02-16
3. Electron and hole mobilities of GaN with bulk, quantum well, and HEMT structures;Journal of Applied Physics;2021-09-28
4. Kinetic Monte Carlo Simulation of the Growth of AlN Films by Metal Organic Chemical Vapor Deposition;physica status solidi (b);2019-08-22
5. Achieving high electron mobility in AlInGaN/GaN heterostructures: The correlation between thermodynamic stability and electron transport properties;Applied Physics Letters;2019-06-03
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