Electron and hole mobilities of GaN with bulk, quantum well, and HEMT structures
Author:
Affiliation:
1. Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
https://aip.scitation.org/doi/pdf/10.1063/5.0060630
Reference41 articles.
1. Route to High Hole Mobility in GaN via Reversal of Crystal-Field Splitting
2. Free-carrier mobility in GaN in the presence of dislocation walls
3. Mobility of electrons in bulk GaN andAlxGa1−xN/GaNheterostructures
4. Charge control and mobility studies for an AlGaN/GaN high electron mobility transistor
5. High electron mobility in AlGaN/GaN heterostructures grown on bulk GaN substrates
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1. InN/InAlN heterostructures for new generation of fast electronics;Journal of Applied Physics;2024-06-25
2. Hole Mobility Enhancement Mechanism of Wurtzite GaN/AlN Heterojunction Quantum Well Under Tensile and Compressive Stresses;IEEE Transactions on Electron Devices;2023-08
3. Electron–Phonon Interaction and Electron Transport;Graduate Texts in Physics;2023
4. Wade Bandgap Semiconductor and Photonic Crystals;Graduate Texts in Physics;2023
5. Erratum: “Electron and hole mobilities of GaN with bulk, quantum well and HEMT structures” [J. Appl. Phys. 130, 125701 (2021)];Journal of Applied Physics;2022-10-07
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