Charge control and mobility studies for an AlGaN/GaN high electron mobility transistor
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.369493
Reference20 articles.
1. Stimulated Emission by Current Injection from an AlGaN/GaN/GaInN Quantum Well Device
2. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
3. Characteristics of InGaN multi‐quantum‐well‐structure laser diodes
4. Continuous‐wave operation of InGaN multi‐quantum‐well‐structure laser diodes at 233 K
5. Room Temperature Pulsed Operation of Nitride Based Multi-Quantum-Well Laser Diodes with Cleaved Facets on Conventional C-Face Sapphire Substrates
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