A study of Al1−xInxN growth by reflection high-energy electron diffraction—incorporation of cation atoms during molecular-beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2894191
Reference14 articles.
1. Semiconductor and Semimetals;Trampert A.,1998
2. Calculation of unstable mixing region in wurtzite In1−x−yGaxAlyN
3. Molecular simulation study of miscibility of ternary and quaternary InGaAlN alloys
4. Analysis of Unstable Two-Phase Region in Wurtzite Group III Nitride Ternary Alloy Using Modified Valence Force Field Model
5. First-principles calculations of gap bowing inInxGa1−xNandInxAl1−xNalloys: Relation to structural and thermodynamic properties
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1. MBE of III-Nitride Semiconductors for Electronic Devices;Molecular Beam Epitaxy;2019-02-08
2. Migration-enhanced metal–organic chemical vapor deposition of AlxIn1−xN/GaN heterostructures (x>0.75) on c-plane sapphire;Journal of Crystal Growth;2011-07
3. Molecular-beam epitaxy of AlInN: An effect of source flux and temperature on indium atom incorporation in alloys;Journal of Applied Physics;2010-08
4. Reproducible and uniform growth of GaN based HEMTs on 4 inch SiC by plasma assisted molecular beam epitaxy suitable for production;physica status solidi (a);2010-04-28
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