GaInN/GaN multiple-quantum-well light-emitting diodes grown by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.123199
Reference14 articles.
1. Blue‐violet light emitting gallium nitride p‐n junctions grown by electron cyclotron resonance‐assisted molecular beam epitaxy
2. Blue and green electroluminescence from MBE grown GaN/InGaN heterostructures
3. GaN based LEDs grown by molecular beam epitaxy
4. Efficiency of NH3 as nitrogen source for GaN molecular beam epitaxy
5. Molecular-beam epitaxy of gallium nitride on (0001) sapphire substrates using ammonia
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