Molecular-beam epitaxy of gallium nitride on (0001) sapphire substrates using ammonia
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.366840
Reference24 articles.
1. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes
2. Formation of phase intergrowth in the syntheses of Bi-superconducting thin films
3. Dynamics of film growth of GaAs by MBE from Rheed observations
4. Epitaxial Growth of GaN Films Produced by ECR-Assisted MBE
5. GaN grown by molecular beam epitaxy at high growth rates using ammonia as the nitrogen source
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