Formation of GaN quantum dots by molecular beam epitaxy using NH3 as nitrogen source-Reference-Cited by-同舟云学术

Formation of GaN quantum dots by molecular beam epitaxy using NH3 as nitrogen source

Published:2015-07-14 Issue:2 Volume:118 Page:024304
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Damilano B.¹^ORCID,Brault J.¹,Massies J.¹

Affiliation:

1. CRHEA-CNRS, Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications, Centre National de la Recherche Scientifique, Rue B. Grégory, Valbonne 06560, France

Funder

Agence Nationale de la Recherche (French National Research Agency)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4923425

Reference66 articles.

1. InAs quantum boxes: Highly efficient radiative traps for light emitting devices on Si

2. Stranski-Krastanov growth mode during the molecular beam epitaxy of highly strained GaN

3. Structure and growth of crystalline superlattices: From monolayer to superlattice

4. From visible to white light emission by GaN quantum dots on Si(111) substrate

5. High-density and size-controlled GaN self-assembled quantum dots grown by metalorganic chemical vapor deposition

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