Morphology of GaN Monolayers Grown on AlN Surface During Ammonia Flow Cycling-Reference-Cited by-同舟云学术

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Morphology of GaN Monolayers Grown on AlN Surface During Ammonia Flow Cycling

Published:2022-06-30 Issue: Volume: Page:
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Container-title:2022 IEEE 23rd International Conference of Young Professionals in Electron Devices and Materials (EDM)
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Author:

Maidebura Yan E.¹,Malin Timur V.¹,Milakhin Denis S.²,Ponomarev Sergey A.³,Zhuravlev Konstantin S.¹

Affiliation:

1. Laboratory of Molecular Beam Epitaxy of A3B5 compounds Rzhanov Insitute of semiconductor physics SB RAS,Novosibirsk,Russia

2. Laboratory of Molecular Beam Epitaxy of A3B5 compounds Rzhanov Insitute of semiconductor physics SB RAS, Novosibirsk state technical university,Novosibirsk,Russia

3. Laboratory of Nanodiagnostics and Nanolithograhy Rzhanov Insitute of semiconductor physics SB RAS,Novosibirsk,Russia

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9855012/9854868/09855073.pdf?arnumber=9855073

Reference30 articles.

1. First-Principles Surface Phase Diagram for Hydrogen on GaN Surfaces

2. Transformation of the elemental composition on the GaN surface during a 2D-3D transition

3. Modification of the surface energy and morphology of GaN monolayers on the AlN surface in an ammonia flow

4. Growth kinetics and optical properties of self-organized GaN quantum dots

5. Self-Assembled GaN Quantum Dots Grown by Plasma-Assisted Molecular Beam Epitaxy

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