GaN based LEDs grown by molecular beam epitaxy
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19971447?crawler=true&mimetype=application/pdf
Reference7 articles.
1. Nakamura, S., and Fasol, G.: ‘The blue laser diode’, (Springer Berlin 1997)
2. Blue‐violet light emitting gallium nitride p‐n junctions grown by electron cyclotron resonance‐assisted molecular beam epitaxy
3. Microwave performance of AlGaN/GaN inverted MODFET's
4. Gas source molecular beam epitaxy of wurtzite GaN on sapphire substrates using GaN buffer layers
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1. Formulation of the LED's radiant powercurrent characteristic at pulsed high currents;Optik - International Journal for Light and Electron Optics;2013-09
2. Visible Light-Emitting Diodes Grown by Plasma Assisted Molecular Beam Epitaxy on Hydride Vapor-Phase Epitaxy GaN Templates and the Development of Dichromatic (Phosphorless) White LEDs;MRS Proceedings;2005
3. Molecular beam epitaxy of cubic III‐nitrides on GaAs substrates;physica status solidi (c);2003-08-05
4. Effect of buffer layer preparation on GaN epilayers grown by gas-source molecular-beam epitaxy;Applied Physics Letters;2001-02-05
5. Improved Radiative Efficiency using Self-Formed GaInN/GaN Quantum Dots Grown by Molecular Beam Epitaxy;physica status solidi (a);2000-07
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