SiGe-on-insulator prepared by wafer bonding and layer transfer for high-performance field-effect transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1342212
Reference10 articles.
1. Electron transport properties of Si/SiGe heterostructures: Measurements and device implications
2. High hole mobility in SiGe alloys for device applications
3. Electron mobility enhancement in strained-Si n-type metal-oxide-semiconductor field-effect transistors
4. Electron and hole mobility enhancement in strained-Si MOSFET's on SiGe-on-insulator substrates fabricated by SIMOX technology
5. Low‐temperature silicon epitaxy by ultrahigh vacuum/chemical vapor deposition
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