Defects and electronic transport in hydrogenated amorphous SiC films of interest for low dielectric constant back end of the line dielectric systems
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4818480
Reference82 articles.
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4. Physical and Barrier Properties of Plasma-Enhanced Chemical Vapor Deposited α-SiC:H Films from Trimethylsilane and Tetramethylsilane
5. Low temperature oxidation and selective etching of chemical vapor deposition a-SiC:H films
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