Impact of VUV photons on SiO2 and organosilicate low-k dielectrics: General behavior, practical applications, and atomic models-Reference-Cited by-同舟云学术

Impact of VUV photons on SiO2 and organosilicate low-k dielectrics: General behavior, practical applications, and atomic models

Published:2019-03 Issue:1 Volume:6 Page:011301
ISSN:1931-9401
Container-title:Applied Physics Reviews
language:en
Short-container-title:Applied Physics Reviews

Author:

Baklanov M. R.¹²^ORCID,Jousseaume V.³⁴,Rakhimova T. V.⁵,Lopaev D. V.⁵^ORCID,Mankelevich Yu. A.⁵^ORCID,Afanas'ev V. V.⁶^ORCID,Shohet J. L.⁷^ORCID,King S. W.⁸^ORCID,Ryan E. T.⁹

Affiliation:

1. North China University of Technology, 100144 Beijing, China

2. Moscow Technological University (MIREA), 119454 Moscow, Russia

3. Université Grenoble Alpes, F-38000 Grenoble, France

4. CEA, LETI, MINATEC Campus, F-38054 Grenoble, France

5. Skobeltsyn Institute of Nuclear Physics, Lomonosov Moscow State University, 119991 Moscow, Russia

6. Department of Physics and Astronomy, University of Leuven, B-3001 Leuven, Belgium

7. Plasma Processing and Technology Laboratory and Department of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, USA

8. Logic Technology Development, Intel Corporation, Hillsboro, Oregon 97124, USA

9. GLOBALFOUNDRIES, Albany, New York 12203, USA

Funder

National Science Foundation

Semiconductor Research Corporation

Russian Foundation for Basic Research

Russian Science Foundation

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5054304

Reference568 articles.

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4. Porous pSiCOH Ultralow-k Dielectrics for Chip Interconnects Prepared by PECVD

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