An advanced physical model for the Coulombic scattering mobility in 4H-SiC inversion layers
Author:
Affiliation:
1. Electrical Engineering Division, University of Cambridge, 9 JJ Thomson Ave., Cambridge CB3 0FA, United Kingdom
Funder
Engineering and Physical Sciences Research Council
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/5.0002838
Reference29 articles.
1. Material science and device physics in SiC technology for high-voltage power devices
2. Fundamentals of Silicon Carbide Technology
3. Interface trap properties of thermally oxidized n-type 4H–SiC and 6H–SiC
4. Time Dependence of Bias-Stress-Induced SiC MOSFET Threshold-Voltage Instability Measurements
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3. Advances in Inversion Channel Mobility Model for 4H-SiC MOS Devices;Silicon;2023-08-09
4. Impact of Post-Trench Process Treatment on Electron Scattering Mechanisms in 4H-SiC Trench MOSFETs;IEEE Transactions on Electron Devices;2023-04
5. Comparative Study of Hall Effect Mobility in Inversion Layer of 4H-SiC MOSFETs With Nitrided and Phosphorus-Doped Gate Oxides;IEEE Transactions on Electron Devices;2021-12
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