Comparative Study of Hall Effect Mobility in Inversion Layer of 4H-SiC MOSFETs With Nitrided and Phosphorus-Doped Gate Oxides-Reference-Cited by-同舟云学术

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Comparative Study of Hall Effect Mobility in Inversion Layer of 4H-SiC MOSFETs With Nitrided and Phosphorus-Doped Gate Oxides

Published:2021-12 Issue:12 Volume:68 Page:6321-6329
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Noguchi Munetaka^ORCID,Watanabe Tomokatsu,Watanabe Hiroshi,Kita Koji,Miura Naruhisa

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9632442/09632361.pdf?arnumber=9632361

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Influence of fixed charges and trapped electrons on free electron mobility at 4H-SiC(0001)/SiO₂ interfaces with gate oxides annealed in NO or POCl₃;Applied Physics Express;2024-08-01

2. Simultaneous electric dipoles and flat-band voltage modulation in 4H-SiC MOS capacitors through HfO₂/SiO₂ interface engineering;Journal of Physics D: Applied Physics;2024-06-24

3. Different temperature dependence of mobility in n- and p-channel 4H-SiC MOSFETs;Japanese Journal of Applied Physics;2023-11-01

4. High Hall electron mobility in the inversion layer of 4H-SiC (0001)/SiO₂ interfaces annealed in POCl₃;Applied Physics Express;2023-07-01

5. Effect of nitrogen introduced at the SiC/SiO₂interface and SiC side on the electronic states by first-principles calculation;Japanese Journal of Applied Physics;2023-06-01

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