High Hall electron mobility in the inversion layer of 4H-SiC (0001)/SiO2 interfaces annealed in POCl3

Abstract

Abstract Hall effect measurements were conducted for MOSFETs with and without post-oxidation-annealing (POA) fabricated on the p-body doping in a wide doping range to vary the effective normal field (E eff). The Hall mobility (μ Hall) in the high-E eff region of the MOSFETs annealed in phosphoryl chloride (μ Hall = 41 cm2 V−1 s−1 at E eff = 1.1 MV cm−1) is much higher than that of MOSFETs annealed in nitric oxide (NO) (μ Hall = 14 cm2 V−1 s−1 at E eff = 1.1 MV cm−1), suggesting that the trapped electrons act as strong Coulomb scattering centers for the MOSFETs annealed in NO and without POA.