N-channel field-effect mobility inversely proportional to the interface state density at the conduction band edges of SiO2/4H-SiC interfaces
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://scitation.aip.org/deliver/fulltext/aip/journal/adva/5/1/1.4905781.pdf?itemId=/content/aip/journal/adva/5/1/10.1063/1.4905781&mimeType=pdf&containerItemId=content/aip/journal/adva
Reference24 articles.
1. Interfacial characteristics of N2O and NO nitrided SiO2 grown on SiC by rapid thermal processing
2. Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide
3. Generation of very fast states by nitridation of the SiO2/SiC interface
4. Effects of Nitridation on 4H-SiC MOSFETs Fabricated on Various Crystal Faces
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3. Characterization of nitrided SiC(1 1‾ 00) MOS structures by means of electrical measurements and X-ray photoelectron spectroscopy;Materials Science in Semiconductor Processing;2024-06
4. Development of Wide-JFET Trench-Etched Double-Diffused MOS (TED-MOS) for High-Voltage Applications;IEEE Transactions on Electron Devices;2024-04
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