Impact of Post-Trench Process Treatment on Electron Scattering Mechanisms in 4H-SiC Trench MOSFETs
Author:
Affiliation:
1. Institute of Microelectronics of Chinese Academy of Sciences, Beijing, China
2. State Key Laboratory of Advance Power Semiconductor Device, Zhuzhou CRRC Times Semiconductor Company Ltd., Zhuzhou, China
Funder
National Key Research and Development Program of China
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/10081247/10056836.pdf?arnumber=10056836
Reference26 articles.
1. Influence of Diverse Post-Trench Processes on the Electrical Performance of 4H-SiC MOS Structures
2. Investigation of Trenched and High Temperature Annealed 4H-SiC
3. A Physical Model of High Temperature 4H-SiC MOSFETs
4. Effect of process variations and ambient temperature on electron mobility at the SiO/sub 2//4H-SiC interface
5. Low Roughness SiC Trench Formed by ICP Etching with Sacrificial Oxidation and Ar Annealing Treatment
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. 3D Van der Pauw Device for MOS Channel Characterization on 4H-SiC Trench Sidewalls;IEEE Electron Device Letters;2024-04
2. Spin exchange dynamics in 4H SiC monocrystals with different nitrogen donor concentrations;Journal of Applied Physics;2023-10-11
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