A Physical Model of High Temperature 4H-SiC MOSFETs-Reference-Cited by-同舟云学术

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A Physical Model of High Temperature 4H-SiC MOSFETs

Published:2008-08 Issue:8 Volume:55 Page:2029-2040
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Potbhare Siddharth,Goldsman Neil,Lelis Aivars,McGarrity James M.,McLean F. Barry,Habersat Daniel

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/4578833/04578879.pdf?arnumber=4578879

Cited by 117 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Neural Network Modeling Method With Low-Rate Sampling for Wide Temperature Range SiC MOSFETs Application;IEEE Transactions on Electron Devices;2024-06

2. An Analytical Switching Loss Model for SiC MOSFET Considering Temperature-Dependent Reverse Recovery Over an Extremely Wide High-Temperature Range;IEEE Transactions on Power Electronics;2024-06

3. Wide Temperature Range Modeling of Implanted Resistors Based on 4H-SiC CMOS Process;IEEE Transactions on Electron Devices;2024-06

4. Effect of carbon coating on surface structure in annealing process of high-dose implanted/annealed SiC;Journal of Applied Physics;2024-05-08

5. Temperature dependent trap characterisation and modelling of silicon carbide MOS capacitor;2024 25th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE);2024-04-07

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