Interface trap properties of thermally oxidized n-type 4H–SiC and 6H–SiC-Reference-Cited by-同舟云学术

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Interface trap properties of thermally oxidized n-type 4H–SiC and 6H–SiC

Published:2005-04 Issue:4 Volume:49 Page:545-553
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Rudenko T.E.,Osiyuk I.N.,Tyagulski I.P.,Ólafsson H.Ö.,Sveinbjörnsson E.Ö.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference26 articles.

1. Interface properties of metal-oxide-semiconductor structures on n-type 6H– and 4H–SiC;Friedrichs;J Appl Phys,1996

2. Inversion layer mobility in SiC MOSFET’s;Sridevan;Mater Sci Forum,1998

3. Detailed investigation of n-channel enhancement 6H–SiC MOSFET’s;Schörner;IEEE Trans Electron Dev,1999

4. Intrinsic SiC/SiO2 interface states;Afanas’ev;Phys Status Solidi (a),1997

5. Carbon cluster model for electronic states at SiC/SiO2 interfaces;Bassler;Diamond Relat Mater,1997

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1. Complications of Charge Pumping Analysis for Silicon Carbide MOSFETs;Materials Science Forum;2023-05-31

2. Improvement of channel-carrier mobility in 4H-SiC MOSFETs correlated with passivation of very fast interface traps using sodium enhanced oxidation;AIP Advances;2023-05-01

3. Cryogenic-temperature investigation of negative bias stress inducing threshold voltage instabilities on 4H-SiC MOSFETs;Microelectronics Reliability;2022-11

4. Detection of near-interface traps in NO annealed 4H-SiC metal oxide semiconductor capacitors combining different electrical characterization methods;Journal of Applied Physics;2022-06-07

5. A method for characterizing near-interface traps in SiC metal–oxide–semiconductor capacitors from conductance–temperature spectroscopy measurements;Journal of Applied Physics;2021-02-07

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