Abstract
Unexpected behavior is observed when charge pumping is performed on silicon carbide MOSFETs with a thermally grown silicon dioxide gate dielectric. Supported by experimental evidence, two root causes are proposed: the trap density and the channel non-equilibrium. These are difficult to overcome experimentally due to limitations by oxide breakdown and doping variation along the channel, respectively. A correct interpretation then requires a 2D model.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science