Near-surface density of ion-implanted Si studied by Rutherford backscattering and total-reflection x-ray fluorescence
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1997289
Reference11 articles.
1. Springer Series in Materials Science;Harbeke G. C.,1989
2. Investigation of chromium, cobalt, and nickel-implantation in silicon using Auger electron spectrometry, secondary ion mass spectrometry, Rutherford backscattering spectrometry, and Monte Carlo simulation
3. A broad beam ion source used for planar sputter-etching of shallow layers from flat samples and determination of their mass density
4. Depth profiles of shallow implanted layers by soft ion sputtering and total-reflection X-ray fluorescence
5. Density-depth profiles of an As-implanted Si wafer studied by repeated planar sputter etching and total reflection x-ray fluorescence analysis
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1. Performance of TXRF and GI-XRF Analyses;Total-Reflection X-Ray Fluorescence Analysis and Related Methods;2014-12-19
2. High-energy-resolution grazing emission X-ray fluorescence applied to the characterization of thin Al films on Si;Spectrochimica Acta Part B: Atomic Spectroscopy;2013-10
3. Bioactivity of Mg-ion-implanted zirconia and titanium;Applied Surface Science;2007-01
4. Challenges of total reflection X-ray fluorescence for surface- and thin-layer analysis;Spectrochimica Acta Part B: Atomic Spectroscopy;2006-11
5. Atomic spectrometry update—X-ray fluorescence spectrometry;J. Anal. At. Spectrom.;2006
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