A broad beam ion source used for planar sputter-etching of shallow layers from flat samples and determination of their mass density-Reference-Cited by-同舟云学术

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A broad beam ion source used for planar sputter-etching of shallow layers from flat samples and determination of their mass density

Published:2004-03 Issue:1 Volume:217 Page:158-166
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

von Bohlen A,Krzyżanowska H,Klockenkämper R

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference16 articles.

1. Fundamentals of Surface and Thin Film Analysis;Feldman,1986

2. Analytical Chemistry,1998

3. Surface and Thin Film Analysis,2002

4. Depth profiles of a shallow implanted layer in a Si wafer determined by different methods of thin-layer analysis

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1. Performance of TXRF and GI-XRF Analyses;Total-Reflection X-Ray Fluorescence Analysis and Related Methods;2014-12-19

2. Near-surface density of ion-implanted Si studied by Rutherford backscattering and total-reflection x-ray fluorescence;Journal of Applied Physics;2005-08

3. Parasitic ion-implantation produced by a Kaufman-type ion source used for planar etching of surfaces;Analytical and Bioanalytical Chemistry;2005-07-21

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