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Density-depth profiles of an As-implanted Si wafer studied by repeated planar sputter etching and total reflection x-ray fluorescence analysis

  • Published:2003-10 Issue:10 Volume:35 Page:829-834
  • ISSN:0142-2421
  • Container-title:Surface and Interface Analysis
  • language:en
  • Short-container-title:Surf. Interface Anal.

Author:

Klockenkämper R.,Krzyżanowska H.,von Bohlen A.

Funder

Bundesministerium für Bildung, Wissenschaft, Forschung und Technologie (BMBF).

Ministerium für Schule, Wissenschaft und Forschung des Landes Nordrhein-Westfalen (MWF).

Deutsche Forschungsgemeinschaft.

Publisher

Wiley

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry

Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Depth profiling of low energy ion implantations in Si and Ge by means of micro-focused grazing emission X-ray fluorescence and grazing incidence X-ray fluorescence;Journal of Analytical Atomic Spectrometry;2015

2. Different Fields of Applications;Total-Reflection X-Ray Fluorescence Analysis and Related Methods;2014-12-19

3. Performance of TXRF and GI-XRF Analyses;Total-Reflection X-Ray Fluorescence Analysis and Related Methods;2014-12-19

4. Challenges of total reflection X-ray fluorescence for surface- and thin-layer analysis;Spectrochimica Acta Part B: Atomic Spectroscopy;2006-11

5. Near-surface density of ion-implanted Si studied by Rutherford backscattering and total-reflection x-ray fluorescence;Journal of Applied Physics;2005-08
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