Investigation of chromium, cobalt, and nickel-implantation in silicon using Auger electron spectrometry, secondary ion mass spectrometry, Rutherford backscattering spectrometry, and Monte Carlo simulation
Author:
Publisher
American Chemical Society (ACS)
Subject
Analytical Chemistry
Link
https://pubs.acs.org/doi/pdf/10.1021/ac00015a012
Cited by 17 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Lattice location of implanted Co in heavily doped $$n^+$$ n + - and $$p^+$$ p + -type silicon;Applied Physics A;2017-03-29
2. Coupling of an electrodialyzer with inductively coupled plasma mass spectrometry for the on-line determination of trace impurities in silicon wafers after surface metal extraction;Journal of Chromatography A;2010-02
3. Near-surface density of ion-implanted Si studied by Rutherford backscattering and total-reflection x-ray fluorescence;Journal of Applied Physics;2005-08
4. Density-depth profiles of an As-implanted Si wafer studied by repeated planar sputter etching and total reflection x-ray fluorescence analysis;Surface and Interface Analysis;2003-10
5. Depth profiling of a Co-implanted silicon wafer by total-reflection X-ray fluorescence analysis after repeated oxidation and HF-etching;Analytical Communications;1999
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